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ISP817X, ISP827X, ISP847X ISP817, ISP827, ISP847
HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P96102022 Fimko - Registration No. 192313-01..25 Semko - Reference No. 9639052 01 Demko - Reference No. 305969
ISP817X ISP817
2.54 7.0 6.0 1.2 5.08 4.08 1 2
Dimensions in mm
4 3
4.0 3.0 0.5
7.62 13 Max 0.26
3.0 0.5
ISP827X DESCRIPTION ISP827 2.54 The ISP817, ISP827, ISP847 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo 7.0 transistors in space efficient dual in line plastic 6.0 packages. 1.2 FEATURES 10.16 l Options :9.16 10mm lead spread - add G after part no. 4.0 3.0 Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. 0.5 l High Current Transfer Ratio (50% min) 3.0 l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) 3.35 l High BVCEO ( 35Vmin ) 0.5 l All electrical parameters 100% tested l Custom electrical selections available ISP847X APPLICATIONS ISP847 l Computer terminals 2.54 l Industrial systems controllers l Measuring instruments l Signal transmission between systems of 7.0 different potentials and impedances 6.0
OPTION SM SURFACE MOUNT OPTION G 7.62 1.2 20.32 19.32 1.2 0.6 10.2 9.5 1.4 0.9 0.26 10.16 3.0 0.5 3.35 4.0 3.0
3.35
1 2 3 4 7.62
8 7 6 5
13 Max 0.26 1 2 3 4 5 6 7 8 7.62 13 Max 0.26 16 15 14 13 12 11 10 9
0.5
ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com
26/7/99
ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com
DB92275A-AAS/A2
ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 125C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW
OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION Total Power Dissipation
(derate linearly 2.67mW/C above 25C)
35V 6V 150mW
200mW
ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) MIN TYP MAX UNITS 1.2 6 10 1.4 V V A V V nA TEST CONDITION IF = 20mA IR = 10A VR = 6V IC = 1mA IE = 100A VCE = 20V 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5VVCE 20mA IF , 1mA IC See note 1 See note 1 VIO = 500V (note 1) VCE = 2V , IC = 2mA, RL = 100
Output
Collector-emitter Breakdown (BVCEO) 35 ( Note 2 ) Emitter-collector Breakdown (BVECO) 6 Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note 2) ISP817, ISP827, ISP847
ISP817A,ISP827A,ISP847A ISP817B,ISP827B,ISP847B ISP817C,ISP827C,ISP847C ISP817D,ISP827D,ISP847D
100
Coupled
ISP817GB, ISP827GB, ISP847GB ISP817BL, ISP827BL, ISP847BL
50 80 130 200 300 100 200
600 160 260 400 600 600 600 0.2
% % % % % % % V VRMS VPK s s
Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr Output Fall Time tf
4 3
18 18
Note 1 Note 2
Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.
26/7/99
DB92275A-AAS/A2
Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation P C (mW) Collector-emitter saturation voltage V CE(SAT) (V) 6 5 4 3 2 1 0 0
Collector-emitter Saturation Voltage vs. Forward Current =1mA 3mA 5mA 10mA 15mA
150
100
50
0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature 60
Ic
TA = 25C
5
10
15
Forward current IF (mA) Collector Current vs. Collector-emitter Voltage 50 50mA 30mA Collector current I C (mA) 40 30 20 10 0 IF = 5mA 20mA 15mA 10mA TA = 25C
50 Forward current I F (mA) 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.14 IF = 20mA IC = 1mA Current transfer ratio CTR (%) 0.12 0.10 0.08 0.06 0.04 0.02 0 -30 0 25 50 75 100 Ambient temperature TA ( C )
26/7/99
0
2
4
6
8
10
Collector-emitter voltage VCE ( V ) Current Transfer Ratio vs. Forward Current 320 280 240 200 160 120 80 40 0 1 2 5 10 20 50 Forward current IF (mA)
DB92275A-AAS/A2
Collector-emitter saturation voltage V CE(SAT) (V)
VCE = 5V TA = 25C

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